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 Power Transistors
2SB952, 2SB952A
Silicon PNP epitaxial planar type
For low-voltage switching
10.00.3 1.50.1
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings -40 -50 -20 -40 -5 -12 -7 30 1.3 150 -55 to +150 Unit V
1.5max.
1.1max.
10.5min.
2.0
0.80.1
0.5max.
2.540.3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB952 2SB952A 2SB952 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
5.080.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2 6.00.3
emitter voltage 2SB952A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V
14.70.5 4.40.5 0 to 0.4
V A A W
10.00.3
1.5-0.4
4.40.5
2.0
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
5.080.5
C C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB952 2SB952A 2SB952 2SB952A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = -2A, IB1 = -66mA, IB2 = 66mA Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -2A IC = -5A, IB = - 0.16A IC = -5A, IB = - 0.16A VCE = -10V, IC = - 0.5A, f = 10MHz VCB = -10V, IE = 0, f = 1MHz 150 140 0.1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
3.0-0.2
+0.4
+0
1
Power Transistors
PC -- Ta
40 -6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=-60mA -5 TC=25C -50mA -45mA -40mA -35mA -30mA -3 -25mA -20mA -2 -15mA -10mA -1 -5mA 0 0 20 40 60 80 100 120 140 160 0 -1 -2 -3 -4 -5 -6
2SB952, 2SB952A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-10
VCE(sat) -- IC
IC/IB=30 TC=100C -3 25C -1 -25C
Collector power dissipation PC (W)
30
Collector current IC (A)
(1)
-4
20
- 0.3
- 0.1
10 (2) (3) 0
- 0.03
- 0.01 - 0.1
- 0.3
-1
-3
-10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
-10 IC/IB=30 10000
hFE -- IC
10000 VCE=-2V 3000 1000 300 100 30 10 3
fT -- IC
VCE=-10V f=10MHz TC=25C
Forward current transfer ratio hFE
-3
1000 300 100 30 10 3 1 - 0.1 - 0.3 TC=100C 25C
-1
TC=-25C 100C
- 0.3
25C
-25C
- 0.1
- 0.03
- 0.01 - 0.1
Transition frequency fT (MHz)
-10 -30 -100
3000
- 0.3
-1
-3
-10
-1
-3
1 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 -10 IE=0 f=1MHz TC=25C
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=30 (-IB1=IB2) VCC=-20V TC=25C
Area of safe operation (ASO)
-100 -30 Non repetitive pulse TC=25C ICP -10 IC -3 -1 10ms 300ms t=1ms
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 - 0.1 - 0.3
Switching time ton,tstg,tf (s)
-3
-1 tstg ton tf
- 0.3
- 0.1
Collector current IC (A)
- 0.3 - 0.1 - 0.03
- 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -6 -7 -8
- 0.01 - 0.1 - 0.3
-1
-3
-10
2SB952
- 0.03
-30
2SB952A
-100
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
2SB952, 2SB952A
Thermal resistance Rth(t) (C/W)
102
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3


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